Search results for "Semiconductor device"

Effects of 5 MeV electron irradiation on deep traps and electroluminescence from near-UV InGaN/GaN single quantum well light-emitting diodes with and…

2020

The electrical properties, electroluminescence (EL) power output and deep trap spectra were studied before and after 5 MeV electron irradiation of near-UV single-quantum-well (SQW) light-emitting diodes (LED) structures differing by the presence or absence of InAlN superlattice underlayers (InAlN SL UL). The presence of the underlayer is found to remarkably increase the EL output power and the radiation tolerance of LEDs, which correlates with a much lower and more slowly changing density of deep traps in the QW region with radiation dose, and the higher lifetime of charge carriers, manifested by higher short-circuit current and open-circuit voltage in current–voltage characteristics under …

Overview of Power Electronic Switches: A Summary of the Past, State-of-the-Art and Illumination of the Future.

2020

As the need for green and effective utilization of energy continues to grow, the advancements in the energy and power electronics industry are constantly driven by this need, as both industries are intertwined for obvious reasons. The developments in the power electronics industry has over the years hinged on the progress of the semiconductor device industry. The semiconductor device industry could be said to be on the edge of a turn into a new era, a paradigm shift from the conventional silicon devices to the wide band gap semiconductor technologies. While a lot of work is being done in research and manufacturing sectors, it is important to look back at the past, evaluate the current progr…

Numerical Simulation of Thermal Effects in Coupled Optoelectronic Device-circuit Systems

2008

The control of thermal effects becomes more and more important in modern semiconductor circuits like in the simplified CMOS transceiver representation described by U. Feldmann in the above article Numerical simulation of multiscale models for radio frequency circuits in the time domain. The standard approach for modeling integrated circuits is to replace the semiconductor devices by equivalent circuits consisting of basic elements and resulting in so-called compact models. Parasitic thermal effects, however, require a very large number of basic elements and a careful adjustment of the resulting large number of parameters in order to achieve the needed accuracy.

Improved Temperature Coefficient Modeling through the Recombination Parameter $\gamma$

2020

This study presents an injection dependent numerical model relating Shocldey-Read-Hall defect parameters in crystalline silicon with the recombination parameter $\gamma$ . We demonstrate how the model can be used to predict $\gamma$ for various single level defects. Additionally, we show that $\gamma$ can be significantly influenced by the injection level, in contrast to what is commonly assumed. The injection dependence is found to correlate with the temperature sensitivity of the Shocldey-Read-Hall lifetime. Finally, we demonstrate that the model can be used to predict the temperature coefficient of the open circuit voltage without the use of a temperature dependent measurement, enabling …

2015

Electrically detected magnetic resonance (EDMR) is a commonly used technique for the study of spin-dependent transport processes in semiconductor materials and electro-optical devices. Here, we present the design and implementation of a compact setup to measure EDMR, which is based on a commercially available benchtop electron paramagnetic resonance (EPR) spectrometer. The electrical detection part uses mostly off-the-shelf electrical components and is thus highly customizable. We present a characterization and calibration procedure for the instrument that allowed us to quantitatively reproduce results obtained on a silicon-based reference sample with a “large-scale” state-of-the-art instru…

A summary of expressions for central performance parameters of high efficiency solar cell concepts

2019

This work reviews expressions for central performance parameters of various types of PV-concepts when operating at the radiative limit. Some new expressions not published elsewhere are also included. The performance parameters include the short circuit current density, the open circuit voltage, the maximum power density and the optimal voltage. The cell concepts include single junction cells, cells optically coupled to up- and down-converters, intermediate band solar cells and a couple of implementations of multijunction devices. The Lambert W function is used to express the maximum power density.

Monte Carlo simulation of high‐order harmonics generation in bulk semiconductors and submicron structures

2004

To qualify the feasibility of standard semiconductor materials and Schottky‐barrier diodes (SBDs) for THz high‐order harmonic generation and extraction, the harmonic intensity, intrinsic noise and signal‐to‐noise ratio are calculated by the Monte Carlo method when a periodic high‐frequency large‐amplitude external signal is applied to a semiconductor device. Due to very high signal‐to‐noise ratio heavily doped GaAs SBDs are found to exhibit conditions for frequency mixing and harmonic extraction that are definitively superior to those of bulk materials. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Multi-Scale Modeling of Quantum Semiconductor Devices

2006

This review is concerned with three classes of quantum semiconductor equations: Schrodinger models, Wigner models, and fluid-type models. For each of these classes, some phenomena on various time and length scales are presented and the connections between micro-scale and macro-scale models are explained. We discuss Schrodinger-Poisson systems for the simulation of quantum waveguides and illustrate the importance of using open boundary conditions. We present Wigner-based semiconductor models and sketch their mathematical analysis. In particular we discuss the Wigner-Poisson-Focker-Planck system, which is the starting point of deriving subsequently the viscous quantum hydrodynamic model. Furt…

Heavy-Ion-Induced Degradation in SiC Schottky Diodes : Incident Angle and Energy Deposition Dependence

2017

International audience; Heavy-ion-induced degradation in the reverse leakage current of SiC Schottky power diodes exhibits a strong dependence on the ion angle of incidence. This effect is studied experimentally for several different bias voltages applied during heavy-ion exposure. In addition, TCAD simulations are used to give insight on the physical mechanisms involved.

Design, fabrication, and analysis of a spin-valve based current sensor

2004

Abstract In this work, we suggest a novel current sensor design, based on spin valve technology, with a full Wheatstone bridge configuration. The principal characteristic is that the four magnetoresistance sensing elements, fully active, are deposited and patterned at the same time. This way, differences among them should be insignificant, so improving voltage offset and drift temperature parameters. The complete IC fabrication process involves only three lithography steps, making the process cheaper and faster. In order to get a balanced bridge, the measured current must be properly driven, by means of an auxiliary PCB. Some prototypes, with different input impedances, have been fabricated…